ობიექტები, სადაც ავტორები არიან "Tavkhelidze, A."
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A. Tavkhelidze (2015) Method of Fabrication of Conformal Electrodes for Thermionic and Thermotunnel Energy Converters. GE P 2015 6237 B.
Tavkhelidze, A. (2014) Geometry-induced electron doping in periodic semiconductor nanostructures. Physica E, 60. С. 4-10.
Tavkhelidze, A. (2014) Electronic and thermoelectric properties of nanograting layers. In: The 13th International Symposium on Advanced Materials (ISAM-2013).
Tavkhelidze, A. (2014) Influence of Nanostructure Geometry on Electronic Properties. In: 6th Georgian-German School and Workshop in Basic Science GGSWBS'14.
Tavkhelidze, A. (2014) Influence of Nanostructure Geometry on Electronic Properties. In: The 13th International Symposium on Advanced Materials (ISAM-2013).
Tavkhelidze, A. (2013) Influence of Nanostructure Geometry on Electronic Properties. In: 13th International Symposium on Advanced Materials (ISAM-2013). (გაგზავნილია გამოსაქვეყნებლად)
Tavkhelidze A, Tsakadze L, Taliashvili Z, Jangidze L., Cox I (2013) Liquid metal contact as possible element for thermotunneling. US patent 8,575,597.
Tavkhelidze A, Vepkvadze M, (2013) Surface pairs. US patent 8,574,663.
Taliashvili, Z. და Tavkhelidze, A. და Jangidze, L. და Blagidze, Y. (2013) Vacuum nanogap formation in multilayer structures by an adhesion-controlled process. Thin Solid Films, 542. С. 399-403.
Tavkhelidze A., Bibilashvili A, Cox R. T. (2012) Method for modification of built in potential of diodes. US 8,330,192.
Jangidze, L. და Tavkhelidze, A. და Blagidze, Y. და Taliashvili, Z. (2012) Electroplating of Conformal Electrodes for Vacuum Nanogap Tunnel Junction. J. Electrochem. Soc., 159 (7). D413-D417.
Tavkhelidze A., Bibilashvili A, Cox R. T. (2012) Method for modification of built in potential of diodes. US patent 8,330,192.
Tavkhelidze, A. (2012) Quantum Size Effects in Nanostructures. In: Georgian - German School and Workshop in Basic Science CGSWHP '12. (არ გამოქვეყნებულა)
Tavkhelidze A., Bibilashvili A., Taliashvili Z. (2012) Selective light absorbing semiconductor surface. US patent 8,227,885.
Tavkhelidze A., Edelson J., Cox I., Harbron S (2011) Artificial band gap. US patent 7,935,954.
Tavkhelidze A (2011) Transistor on the basis of new quantum interference effect. US patent 7,893,422.
Harbron S., Hammer M., Jangidze L., Tavkhelidze A. (2010) Catalysts. US patent 7,651,875.
Tavkhelidze A., (2010) Method for fabrication of separators for electrode pairs in diodes. US patent 7,642,467.
Tavkhelidze, A. (2010) Nanostructured electrodes for thermionic and thermotunnel devices. J. Appl. Phys., 108 (4). 044313.
Tavkhelidze, A. (2010) Nanostructured electrodes for thermo-tunnel and thermionic devices. In: 23rd International Vacuum Nanoelectronics Conference (IVNC), Palo Alto, CA, USA, 26-30 July.
Tavkhelidze A., Harbron S. (2010) Process for making electrode pairs. US patent 7,658,772.
Tavkhelidze, A. და Svanidze, V. და Noselidze, I. (2010) Quantum State Depression in a Quantum Well of Special Geometry. In: New Developments in Materials Science. Nova Publishers, р. 1. ISBN 978-1-61668-907-0
Tavkhelidze, A. (2009) Large enhancement of the thermoelectric figure of merit in a ridged quantum well. Nanotechnology, 20 (40). р. 405401.
Bibilashvili A., Tavkhelidze A. (2009) Quantum interference device. US patent 7,566,897.
Tavkhelidze, A. (2009) Thermoelectric properties of nanograting layers. In: Theransport at Nanoscale, 529th Wilhelm and Else Heraueus Seminar. (არ გამოქვეყნებულა)
Tavkhelidze A., Svanidze V., Larsson M. (2008) Method of increasing efficiency of thermotunnel devices. US patent 7,351,996.
Tavkhelidze, A. და Svanidze, V. (2008) Quantum state depression in a semiconductor quantum well. Int. J. Nanosci. , 7 (6). р. 333.
Tavkhelidze, A. და Svanidze, V. (2008) Quantum state depression in quantum well devices. In: The 21 International Vacuum Nanoelectronics Conference IVNC2008, Wroclaw, 13-17 July, Poland.
Tavkhelidze, A. და Svanidze, V. და Tsakadze, L. (2008) Thermotunnel refrigerator with vacuum/insulator tunnel barrier: A theoretical analysis. J. Vac. Sci. Technol. A, 26 (5). С. 5-7.
Vardosanidze L., Taliashvili Z., Tavkhelidze A., Cox R. T. (2007) Fabrication of close-spaced MEMS devices by method of precise adhesion regulation. US patent 7,208,021.
Tavkhelidze, A. და Svanidze, V. და Noselidze, I. (2007) Fermi gas energetics in low-dimensional metals of special geometry. J. Vac. Sci. Technol. B, 25. р. 1270.
Tavkhelidze A., Harbron S. (2007) Influence of surface geometry on metal properties. US patent 7,220,984.
Tavkhelidze, A. და Bibilashvili, A. და Jangidze, L. და Billenberg , B. და Rampfer, G. F. (2007) Quantum interference depression in thin metal films with nanostructured surfaces. Nanotechnology Perceptions, 4. С. 25-28.
Tavkhelidze, A. და Svanidze, V. და Noselidze, I. (2007) Quantum interference depression in thin metal films with ridged surface. In: Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International.
Tavkhelidze A., Taliashvili Z. (2007) Thermionic vacuum diode device with adjustable electrodes. US patent 7,253,549.
Tavkhelidze A., Taliashvili Z. (2007) Thermionic vacuum diode device with adjustable electrodes. US patent 7,169,006.
Taliashvili Z., Tavkhelidze A., Geller R., Cox I. W., Tsakadze L. (2006) Electrode sandwich separation. US patent 7,140,102.
Tavkhelidze A., Harbron S. (2006) Influence of surface geometry on metal properties. US patent 7,074,498.
Tavkhelidze, A. და Bibilashvili, A. და Jangidze, L. და Shimkunas, A. და Maugher, P. და Rampfer, G. F. და Almaraz, L. და Kordesch, M. E. და Katan, N. და Wlitzki, H. (2006) Observation of quantum interference effect in solids. J. Vac. Sci. Technol. B, 24. р. 1413.
Tavkhelidze A., Tsakadze L., Skhiladze G., Cox I. W. (2005) Method for making electrode pairs. US patent 6,869,855.
Martinovsky A., Tavkhelidze A., Cox I. (2005) Thermotunnel converter with spacers between the electrodes. US patent 6,876,123.
Tavkhelidze A., Edelson J. S., Cox I. W., Harbron S. (2004) Artificial band gap. US patent 6,680,214.
Tavkhelidze A., Koptonashvili L., Berishvili Z., Skhiladze G. (2004) Method for making a diode device. US patent 6,774,003.
Cox, I. და Tavkhelidze, A. (2004) Power Chips for Efficient Energy Conversion. In: AIP Conf. Proc. v. 699, p. 1238.
Tavkhelidze, A. და Taliashvili, Z. და Bibilashvili, A. და Tsakadze, L. და Jangidze, L. და Skhiladze, G. და Cox, I და Magdych, J. (2004) Thermal Management Solutions Using Electron Tunneling Through a Nano‐Scale Vacuum Gap. In: AIP Conf. Proc. Volume 699.
Tavkhelidze A., Edelson J. S. (2004) Thermionic vacuum diode device with adjustable electrodes. US patent 6,720,704.
Tavkhelidze A. (2003) Method for increasing emission through a potential barrier. US patent 6,531,703.
Tavkhelidze, A. და Skhiladze, G. და Bibilashvili, A. და Tsakadze, L. და Jangidze, L. და Taliashvili, Z. და Cox, I. და Berishvili, Z. (2002) Electron Tunneling Through Large Area Vacuum Gap -- Preliminary Results. In: Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on.
Tavkhelidze A., Koptonashvili L., Berishvili Z., Skhiladze G. (2002) Method for making a diode device. US patent 6,417,060.
Tavkhelidze A. (2001) Method for increasing of tunneling through a potential barrier. US patent 6,281,514.
Tavkhelidze A., Bibilashvili A., Samadashvili Z. (2001) Wafer having smooth surface. US patent 6,281,139.
Tavkhelidze, A. და Mygind, J. (1998) Low-frequency noise in single electron tunneling transistor. J. Appl. Phys. , 83. р. 310.
Kuzmin, L. S. და Pashkin, Yu. A. და Tavkhelidze, A. და Ahlers, F. -J. და Weimann, T. და Quenter, D. და Niemeyer, J. (1996) An all‐chromium single electron transistor: A possible new element of single electronics. Appl. Phys. Lett., 68. р. 2902.
