Geometry-induced electron doping in periodic semiconductor nanostructures

Tavkhelidze, A. (2014) Geometry-induced electron doping in periodic semiconductor nanostructures. Physica E, 60. pp. 4-10.

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Abstract

Recently, new quantum features have been observed and studied in the area of nanostructured layers. Nanograting on the surface of the thin layer imposes additional boundary conditions on the electron wave function and induces G-doping or geometry doping. G-doping is equivalent to donor doping from the point of view of the increase in electron concentration n. However, there are no ionized impurities. This preserves charge carrier scattering to the intrinsic semiconductor level and increases carrier mobility with respect to the donor-doped layer. G-doping involves electron confinement to the nanograting layer. Here, we investigate the system of multiple nanograting layers forming a series of hetero- or homojunctions. The system includes main and barrier layers. In the case of heterojunctions, both types of layers were G-doped. In the case of homojunctions, main layers were G-doped and barrier layers were donor-doped. In such systems, the dependence of n on layer geometry and material parameters was analysed. Si and GaAs homojunctions and GaAs/AlGaAs, Si/SiGe, GaInP/AlGAs, and InP/InAlAs heterojunctions were studied. G-doping levels of 1018–1019 cm−3 were obtained in homojunctions and type II heterojunctions. High G-doping levels were attained only when the difference between band gap values was low.

Item Type: Article
Subjects: T Technology > T Technology (General)
Divisions: Faculties/Schools > School of Natural Sciences and Engineering
Depositing User: Professor Avtandil Tavkhelidze
Date Deposited: 04 May 2014 14:34
Last Modified: 02 Apr 2015 08:32
URI: http://eprints.iliauni.edu.ge/id/eprint/1396

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