Method for making a diode device

Tavkhelidze A., Koptonashvili L., Berishvili Z., Skhiladze G. (2002) Method for making a diode device. US patent 6,417,060.

[img] Text
US6417060.pdf
Restricted to Registered users only

Download (576kB)
[img]
Preview
Text
Pages from US6417060.pdf

Download (45kB) | Preview

Abstract

A method for manufacturing a pair of electrodes comprises fabricating a first electrode with a substantially flat surface and placing a sacrificial layer over a surface of the first electrode, wherein the sacrificial layer comprises a first material. A second material is placed over the sacrificial layer, wherein the second material comprises a material that is suitable for use as a second electrode. The sacrificial layer is removed with an etchant, wherein the etchant chemically reacts with the first material, and further wherein a region between the first electrode and the second electrode comprises a gap that is a distance of 50 nanometers or less, preferably 5 nanometers or less. Alternatively, the sacrificial layer is removed by cooling the sandwich with liquid nitrogen, or alternatively still, the sacrificial layer is removed by heating the sacrificial layer, thereby evaporating the sacrificial layer.

Item Type: Patent
Subjects: T Technology > T Technology (General)
Divisions: Faculties/Schools > School of Natural Sciences and Engineering
Depositing User: Professor Avtandil Tavkhelidze
Date Deposited: 11 May 2014 10:01
Last Modified: 02 Apr 2015 07:31
URI: http://eprints.iliauni.edu.ge/id/eprint/1452

Actions (login required)

View Item View Item