Method for modification of built in potential of diodes

Tavkhelidze A., Bibilashvili A, Cox R. T. (2012) Method for modification of built in potential of diodes. US patent 8,330,192.

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Abstract

In broad terms the present invention is a semiconductor junction comprising a first material (102) and a second material (104), in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed.

Item Type: Patent
Subjects: T Technology > T Technology (General)
Divisions: Faculties/Schools > School of Natural Sciences and Engineering
Depositing User: Professor Avtandil Tavkhelidze
Date Deposited: 08 May 2014 09:29
Last Modified: 02 Apr 2015 07:58
URI: http://eprints.iliauni.edu.ge/id/eprint/1427

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