Artificial band gap

Tavkhelidze A., Edelson J., Cox I., Harbron S (2011) Artificial band gap. US patent 7,935,954.

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Abstract

A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal.

Item Type: Patent
Subjects: T Technology > T Technology (General)
Divisions: Faculties/Schools > School of Natural Sciences and Engineering
Depositing User: Professor Avtandil Tavkhelidze
Date Deposited: 08 May 2014 09:28
Last Modified: 02 Apr 2015 07:56
URI: http://eprints.iliauni.edu.ge/id/eprint/1429

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