Tavkhelidze A., Edelson J. S., Cox I. W., Harbron S. (2004) Artificial band gap. US patent 6,680,214.
![]() |
Text
US6680214.pdf Restricted to Registered users only Download (910kB) | Request a copy |
|
|
Text
Pages from US6680214.pdf Download (51kB) | Preview |
Official URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PT...
Abstract
A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal.
Item Type: | Patent |
---|---|
Subjects: | T Technology > T Technology (General) |
Divisions: | Faculties/Schools > School of Natural Sciences and Engineering |
Depositing User: | Professor Avtandil Tavkhelidze |
Date Deposited: | 08 May 2014 09:28 |
Last Modified: | 02 Apr 2015 07:37 |
URI: | http://eprints.iliauni.edu.ge/id/eprint/1450 |
Actions (login required)
![]() |
View Item |