Artificial band gap

Tavkhelidze A., Edelson J. S., Cox I. W., Harbron S. (2004) Artificial band gap. US patent 6,680,214.

	Text US6680214.pdf Restricted to Registered users only Download (910kB) | Request a copy
Preview	Text Pages from US6680214.pdf Download (51kB) | Preview

Abstract

A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal.

Item Type:	Patent
Subjects:	T Technology > T Technology (General)
Divisions:	Faculties/Schools > School of Natural Sciences and Engineering
Depositing User:	Professor Avtandil Tavkhelidze
Date Deposited:	08 May 2014 09:28
Last Modified:	02 Apr 2015 07:37
URI:	http://eprints.iliauni.edu.ge/id/eprint/1450

Actions (login required)

View Item