Bibilashvili A., Tavkhelidze A. (2009) Quantum interference device. US patent 7,566,897.
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Official URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PT...
Abstract
A quantum interference transistor comprising an source region for emitting electron waves into a vacuum, a drain region for collecting the electron waves, a repeating nanostructure in a region between the source and drain regions for introducing a constant phase shift between a plurality of electron waves, and a gate for controlling the phase shift introduced by the nanostructure; wherein the repeating nanostructure is characterized by having sharply defined geometric patterns or indents of a dimension that creates de Broglie wave interference.
Item Type: | Patent |
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Subjects: | T Technology > T Technology (General) |
Divisions: | Faculties/Schools > School of Natural Sciences and Engineering |
Depositing User: | Professor Avtandil Tavkhelidze |
Date Deposited: | 08 May 2014 09:26 |
Last Modified: | 02 Apr 2015 07:49 |
URI: | http://eprints.iliauni.edu.ge/id/eprint/1434 |
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