Quantum interference device

Bibilashvili A., Tavkhelidze A. (2009) Quantum interference device. US patent 7,566,897.

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Abstract

A quantum interference transistor comprising an source region for emitting electron waves into a vacuum, a drain region for collecting the electron waves, a repeating nanostructure in a region between the source and drain regions for introducing a constant phase shift between a plurality of electron waves, and a gate for controlling the phase shift introduced by the nanostructure; wherein the repeating nanostructure is characterized by having sharply defined geometric patterns or indents of a dimension that creates de Broglie wave interference.

Item Type: Patent
Subjects: T Technology > T Technology (General)
Divisions: Faculties/Schools > School of Natural Sciences and Engineering
Depositing User: Professor Avtandil Tavkhelidze
Date Deposited: 08 May 2014 09:26
Last Modified: 02 Apr 2015 07:49
URI: http://eprints.iliauni.edu.ge/id/eprint/1434

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