Quantum interference device

Bibilashvili A., Tavkhelidze A. (2009) Quantum interference device. US patent 7,566,897.

	Text US7566897.pdf Restricted to Registered users only Download (414kB)
Preview	Text Pages from US7566897.pdf Download (51kB) | Preview

Abstract

A quantum interference transistor comprising an source region for emitting electron waves into a vacuum, a drain region for collecting the electron waves, a repeating nanostructure in a region between the source and drain regions for introducing a constant phase shift between a plurality of electron waves, and a gate for controlling the phase shift introduced by the nanostructure; wherein the repeating nanostructure is characterized by having sharply defined geometric patterns or indents of a dimension that creates de Broglie wave interference.

Item Type:	Patent
Subjects:	T Technology > T Technology (General)
Divisions:	Faculties/Schools > School of Natural Sciences and Engineering
Depositing User:	Professor Avtandil Tavkhelidze
Date Deposited:	08 May 2014 09:26
Last Modified:	02 Apr 2015 07:49
URI:	http://eprints.iliauni.edu.ge/id/eprint/1434

Actions (login required)

View Item