Quantum interference depression in thin metal films with ridged surface

Tavkhelidze, A. and Svanidze, V. and Noselidze, I. (2007) Quantum interference depression in thin metal films with ridged surface. In: Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International.

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Abstract

We discuss what happens when low dimensional regular indents are fabricated on the surface of a thin metal film. Using corresponding theoretical methods, we study the free electron inside a potential-energy box with ridged wall and compare the results to the case with plane walls. It was shown that, ridged geometry of the wall leads to Quantum Interference Depression (QID), or reduction of the density of quantum states for the electron. Results obtained for the potential-energy box were extrapolated to the low-dimensional metals (thin metal films). QID leads to increase of the Fermi level and corresponding reduction of the work function. Experimental possibility of fabricating such indents on the surface of a thin metal film was studied.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Q Science > QC Physics
Divisions:	Faculties/Schools > School of Natural Sciences and Engineering
Depositing User:	Professor Avtandil Tavkhelidze
Date Deposited:	11 May 2014 10:01
Last Modified:	02 Apr 2015 08:11
URI:	http://eprints.iliauni.edu.ge/id/eprint/1419

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