Tavkhelidze A., Bibilashvili A, Cox R. T. (2012) Method for modification of built in potential of diodes. US 8,330,192.
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Abstract
In broad terms the present invention is a semiconductor junction comprising a first material (102) and a second material (104), in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed.
Item Type: | Patent |
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Subjects: | T Technology > T Technology (General) |
Divisions: | Faculties/Schools > School of Natural Sciences and Engineering |
Depositing User: | Professor Avtandil Tavkhelidze |
Date Deposited: | 04 May 2014 14:34 |
Last Modified: | 02 Apr 2015 08:01 |
URI: | http://eprints.iliauni.edu.ge/id/eprint/1411 |
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