Transistor on the basis of new quantum interference effect

Tavkhelidze A (2011) Transistor on the basis of new quantum interference effect. US patent 7,893,422.

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რეზიუმე

A quantum interference transistor comprising a thin metal film having a protrusion and a thin insulating layer between the metal film and protrusion. A potential barrier is formed in the region beneath the protrusion as a result of quantum interference caused by the geometry of the film and protrusion. A voltage applied between the electrically isolated protrusion ("island") and the thin film leads to a change in the electron wave function of the island which in turn leads to a change in the Fermi level of the metal film in the entire region beneath the protrusion. Consequently, a potential barrier may or may not exist depending on the applied voltage, thus providing the present invention with the transistor-like property of switching between open and closed states.

ობიექტის ტიპი:	პატენტი
თემატიკა:	T Technology > T Technology (General)
ქვეგანყოფილება:	Faculties/Schools > School of Natural Sciences and Engineering
განმათავსებელი მომხმარებელი:	Professor Avtandil Tavkhelidze
განთავსების თარიღი:	08 მაისი 2014 09:28
ბოლო ცვლილება:	02 აპრილი 2015 07:55
URI:	http://eprints.iliauni.edu.ge/id/eprint/1430

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