Items where Subject is "T Technology > T Technology (General)"

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Number of items at this level: 54.

Article

Jangidze, L. and Tavkhelidze, A. and Blagidze, Y. and Taliashvili, Z. (2012) Electroplating of Conformal Electrodes for Vacuum Nanogap Tunnel Junction. J. Electrochem. Soc., 159 (7). D413-D417.

Kuzmin, L. S. and Pashkin, Yu. A. and Tavkhelidze, A. and Ahlers, F. -J. and Weimann, T. and Quenter, D. and Niemeyer, J. (1996) An all‐chromium single electron transistor: A possible new element of single electronics. Appl. Phys. Lett., 68. p. 2902.

Kuzmin, L. S. and Pashkin, Yu. A. and Tavkhelidze, A. N. and Ahlers, F. -J. and Weimann, T. and Quenter, D. and Niemeyer, J. (1996) An all‐chromium single electron transistor: A possible new element of single electronics. Appl. Phys. Lett., 68. p. 2902.

Kuzmin, L. S. and Pashkin, Yu. A. and Tavkhelidze, A. N. and Ahlers, F. -J. and Weimann, T. and Quenter, D. and Niemeyer, J. (1996) An all‐chromium single electron transistor: A possible new element of single electronics. Appl. Phys. Lett., 68. p. 2902.

Taliashvili, Z. and Tavkhelidze, A. and Jangidze, L. and Blagidze, Y. (2013) Vacuum nanogap formation in multilayer structures by an adhesion-controlled process. Thin Solid Films, 542. pp. 399-403.

Tavkhelidze, A. (2014) Geometry-induced electron doping in periodic semiconductor nanostructures. Physica E, 60. pp. 4-10.

Tavkhelidze, A. (2009) Large enhancement of the thermoelectric figure of merit in a ridged quantum well. Nanotechnology, 20 (40). p. 405401.

Tavkhelidze, A. (2010) Nanostructured electrodes for thermionic and thermotunnel devices. J. Appl. Phys., 108 (4). 044313.

Tavkhelidze, A. and Bibilashvili, A. and Jangidze, L. and Billenberg , B. and Rampfer, G. F. (2007) Quantum interference depression in thin metal films with nanostructured surfaces. Nanotechnology Perceptions, 4. pp. 25-28.

Tavkhelidze, A. and Mygind, J. (1998) Low-frequency noise in single electron tunneling transistor. J. Appl. Phys. , 83. p. 310.

Tavkhelidze, A. and Svanidze, V. (2008) Quantum state depression in a semiconductor quantum well. Int. J. Nanosci. , 7 (6). p. 333.

Tavkhelidze, A. and Svanidze, V. and Noselidze, I. (2007) Fermi gas energetics in low-dimensional metals of special geometry. J. Vac. Sci. Technol. B, 25. p. 1270.

Tavkhelidze, A. and Svanidze, V. and Tsakadze, L. (2008) Thermotunnel refrigerator with vacuum/insulator tunnel barrier: A theoretical analysis. J. Vac. Sci. Technol. A, 26 (5). pp. 5-7.

Tavkhelidze, A. N. and Bibilashvili, A. and Jangidze, L. and Billenberg , B. and Rampfer, G. F. (2007) Quantum interference depression in thin metal films with nanostructured surfaces. Nanotechnology Perceptions, 4. pp. 25-28.

ელაშვილი, მიხეილ and ვაჩეიშვილი, ნიკოლოზ and ბასილაია, გიორგი and ჩხაიძე, დავითი and კირკიტაძე, გიორგი and ადიკაშვილი, ლუკა (2015) ვარძიის კომპლექსური მონიტორინგი. ძველი ხელოვნება დღეს, 6. pp. 28-44.

Book Section

Tavkhelidze, A. and Svanidze, V. and Noselidze, I. (2010) Quantum State Depression in a Quantum Well of Special Geometry. In: New Developments in Materials Science. Nova Publishers, p. 1. ISBN 978-1-61668-907-0

Conference or Workshop Item

Cox, I. and Tavkhelidze, A. (2004) Power Chips for Efficient Energy Conversion. In: AIP Conf. Proc. v. 699, p. 1238.

Tavkhelidze, A. (2013) Influence of Nanostructure Geometry on Electronic Properties. In: 13th International Symposium on Advanced Materials (ISAM-2013). (Submitted)

Tavkhelidze, A. (2014) Influence of Nanostructure Geometry on Electronic Properties. In: 6th Georgian-German School and Workshop in Basic Science GGSWBS'14.

Tavkhelidze, A. (2010) Nanostructured electrodes for thermo-tunnel and thermionic devices. In: 23rd International Vacuum Nanoelectronics Conference (IVNC), Palo Alto, CA, USA, 26-30 July.

Tavkhelidze, A. (2012) Quantum Size Effects in Nanostructures. In: Georgian - German School and Workshop in Basic Science CGSWHP '12. (Unpublished)

Tavkhelidze, A. (2009) Thermoelectric properties of nanograting layers. In: Theransport at Nanoscale, 529th Wilhelm and Else Heraueus Seminar. (Unpublished)

Tavkhelidze, A. and Skhiladze, G. and Bibilashvili, A. and Tsakadze, L. and Jangidze, L. and Taliashvili, Z. and Cox, I. and Berishvili, Z. (2002) Electron Tunneling Through Large Area Vacuum Gap -- Preliminary Results. In: Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on.

Tavkhelidze, A. and Svanidze, V. (2008) Quantum state depression in quantum well devices. In: The 21 International Vacuum Nanoelectronics Conference IVNC2008, Wroclaw, 13-17 July, Poland.

Tavkhelidze, A. and Taliashvili, Z. and Bibilashvili, A. and Tsakadze, L. and Jangidze, L. and Skhiladze, G. and Cox, I and Magdych, J. (2004) Thermal Management Solutions Using Electron Tunneling Through a Nano‐Scale Vacuum Gap. In: AIP Conf. Proc. Volume 699.

Thesis

ვარადაშვილი, გიორგი (2011) საბოლოო მომხმარებელზე ორიენტირებული სკრიპტული ენის ერთი რეალიზაციის შესახებ. Masters thesis, ილიას სახელმწიფო უნივერსიტეტი.

Patent

Tavkhelidze A., Edelson J., Cox I., Harbron S (2011) Artificial band gap. US patent 7,935,954.

Tavkhelidze A., Edelson J. S., Cox I. W., Harbron S. (2004) Artificial band gap. US patent 6,680,214.

Harbron S., Hammer M., Jangidze L., Tavkhelidze A. (2010) Catalysts. US patent 7,651,875.

Taliashvili Z., Tavkhelidze A., Geller R., Cox I. W., Tsakadze L. (2006) Electrode sandwich separation. US patent 7,140,102.

Vardosanidze L., Taliashvili Z., Tavkhelidze A., Cox R. T. (2007) Fabrication of close-spaced MEMS devices by method of precise adhesion regulation. US patent 7,208,021.

Tavkhelidze A., Harbron S. (2007) Influence of surface geometry on metal properties. US patent 7,220,984.

Tavkhelidze A., Harbron S. (2006) Influence of surface geometry on metal properties. US patent 7,074,498.

Tavkhelidze A, Tsakadze L, Taliashvili Z, Jangidze L., Cox I (2013) Liquid metal contact as possible element for thermotunneling. US patent 8,575,597.

Tavkhelidze A., (2010) Method for fabrication of separators for electrode pairs in diodes. US patent 7,642,467.

Tavkhelidze A. (2003) Method for increasing emission through a potential barrier. US patent 6,531,703.

Tavkhelidze A. (2001) Method for increasing of tunneling through a potential barrier. US patent 6,281,514.

Tavkhelidze A., Koptonashvili L., Berishvili Z., Skhiladze G. (2004) Method for making a diode device. US patent 6,774,003.

Tavkhelidze A., Koptonashvili L., Berishvili Z., Skhiladze G. (2002) Method for making a diode device. US patent 6,417,060.

Tavkhelidze A., Tsakadze L., Skhiladze G., Cox I. W. (2005) Method for making electrode pairs. US patent 6,869,855.

Tavkhelidze A., Bibilashvili A, Cox R. T. (2012) Method for modification of built in potential of diodes. US patent 8,330,192.

A. Tavkhelidze (2015) Method of Fabrication of Conformal Electrodes for Thermionic and Thermotunnel Energy Converters. GE P 2015 6237 B.

Tavkhelidze A., Svanidze V., Larsson M. (2008) Method of increasing efficiency of thermotunnel devices. US patent 7,351,996.

Tavkhelidze A., Harbron S. (2010) Process for making electrode pairs. US patent 7,658,772.

Bibilashvili A., Tavkhelidze A. (2009) Quantum interference device. US patent 7,566,897.

Tavkhelidze A., Bibilashvili A., Taliashvili Z. (2012) Selective light absorbing semiconductor surface. US patent 8,227,885.

Tavkhelidze A, Vepkvadze M, (2013) Surface pairs. US patent 8,574,663.

Tavkhelidze A., Taliashvili Z. (2007) Thermionic vacuum diode device with adjustable electrodes. US patent 7,253,549.

Tavkhelidze A., Taliashvili Z. (2007) Thermionic vacuum diode device with adjustable electrodes. US patent 7,169,006.

Tavkhelidze A., Edelson J. S. (2004) Thermionic vacuum diode device with adjustable electrodes. US patent 6,720,704.

Martinovsky A., Tavkhelidze A., Cox I. (2005) Thermotunnel converter with spacers between the electrodes. US patent 6,876,123.

Tavkhelidze A (2011) Transistor on the basis of new quantum interference effect. US patent 7,893,422.

Tavkhelidze A., Bibilashvili A., Samadashvili Z. (2001) Wafer having smooth surface. US patent 6,281,139.

Tavkhelidze A., Bibilashvili A, Cox R. T. (2012) Method for modification of built in potential of diodes. US 8,330,192.

This list was generated on Fri Jul 19 00:28:00 2019 PDT.