Tavkhelidze, A. და Svanidze, V. და Noselidze, I. (2007) Quantum interference depression in thin metal films with ridged surface. In: Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International.
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Quantum interference depression in thin metal films with ridged surface.pdf Download (131kB) | გადახედვა |
რეზიუმე
We discuss what happens when low dimensional regular indents are fabricated on the surface of a thin metal film. Using corresponding theoretical methods, we study the free electron inside a potential-energy box with ridged wall and compare the results to the case with plane walls. It was shown that, ridged geometry of the wall leads to Quantum Interference Depression (QID), or reduction of the density of quantum states for the electron. Results obtained for the potential-energy box were extrapolated to the low-dimensional metals (thin metal films). QID leads to increase of the Fermi level and corresponding reduction of the work function. Experimental possibility of fabricating such indents on the surface of a thin metal film was studied.
| ობიექტის ტიპი: | სემინარის ან კონფერენციის მოხსენება (სტატია) |
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| თემატიკა: | Q Science > QC Physics |
| ქვეგანყოფილება: | Faculties/Schools > School of Natural Sciences and Engineering |
| განმათავსებელი მომხმარებელი: | Professor Avtandil Tavkhelidze |
| განთავსების თარიღი: | 11 მაისი 2014 10:01 |
| ბოლო ცვლილება: | 02 აპრილი 2015 08:11 |
| URI: | http://eprints.iliauni.edu.ge/id/eprint/1419 |
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