Tavkhelidze, A. (2009) Thermoelectric properties of nanograting layers. In: Theransport at Nanoscale, 529th Wilhelm and Else Heraueus Seminar. (არ გამოქვეყნებულა)
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Recently, new quantum features have been observed and studied in the area of nanostructured layers (NL). Nanograting on the surface of the thin layer impose additional boundary conditions on electron wave function and reduce the quantum state density. As a result, the chemical potential of NL increases and becomes nanograting size dependent. Here, we propose a system composed of NL and an additional layer on the top of the ridges forming periodic series of p–n junctions [1]. In such system, charge depletion region develops inside the nanograting and its effective depth reduces, becoming a rather strong function of temperature T. Consequently, T-dependence of chemical potential magnifies and Seebeck coefficient S increases. We investigate S in the system of semiconductor NL having abrupt p–n junctions on the top of the grating. Analysis made on the basis of Boltzmann transport equations shows dramatic increase in S. At the same time, other transport coefficients remain unaffected by the junctions. Calculations show one order of magnitude increase in the thermoelectric figure of merit ZT relative to bulk material.
| ობიექტის ტიპი: | სემინარის ან კონფერენციის მოხსენება (სიტყვა) |
|---|---|
| თემატიკა: | T Technology > T Technology (General) |
| ქვეგანყოფილება: | Faculties/Schools > School of Natural Sciences and Engineering |
| განმათავსებელი მომხმარებელი: | Professor Avtandil Tavkhelidze |
| განთავსების თარიღი: | 05 მაისი 2014 12:52 |
| ბოლო ცვლილება: | 01 მაისი 2015 06:25 |
| URI: | http://eprints.iliauni.edu.ge/id/eprint/1412 |
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