Transistor on the basis of new quantum interference effect

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http://eprints.org/relation/isVersionOf http://eprints.iliauni.edu.ge/id/document/8188 http://eprints.org/relation/isVolatileVersionOf http://eprints.iliauni.edu.ge/id/document/8188 http://eprints.org/relation/issmallThumbnailVersionOf http://eprints.iliauni.edu.ge/id/document/8188 archive 15 disk0/00/00/14/30 2014-05-08 09:28:47 2015-04-02 07:55:13 2014-05-08 09:28:47 patent show Tavkhelidze A. avtandil.tavkhelidze@iliauni.edu.ge Transistor on the basis of new quantum interference effect pub T1 fac_eng restricted A quantum interference transistor comprising a thin metal film having a protrusion and a thin insulating layer between the metal film and protrusion. A potential barrier is formed in the region beneath the protrusion as a result of quantum interference caused by the geometry of the film and protrusion. A voltage applied between the electrically isolated protrusion ("island") and the thin film leads to a change in the electron wave function of the island which in turn leads to a change in the Fermi level of the metal film in the entire region beneath the protrusion. Consequently, a potential barrier may or may not exist depending on the applied voltage, thus providing the present invention with the transistor-like property of switching between open and closed states. 2011 published US patent 7,893,422 Tavkhelidze A http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=6&f=G&l=50&co1=AND&d=PTXT&s1=Tavkhelidze.INNM.&OS=IN/Tavkhelidze&RS=IN/Tavkhelidze