Artificial band gap

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http://eprints.org/relation/isVersionOf http://eprints.iliauni.edu.ge/id/document/8189 http://eprints.org/relation/isVolatileVersionOf http://eprints.iliauni.edu.ge/id/document/8189 http://eprints.org/relation/issmallThumbnailVersionOf http://eprints.iliauni.edu.ge/id/document/8189 archive 15 disk0/00/00/14/29 2014-05-08 09:28:51 2015-04-02 07:56:13 2014-05-08 09:28:51 patent show Tavkhelidze A. avtandil.tavkhelidze@iliauni.edu.ge Artificial band gap pub T1 fac_eng restricted A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal. 2011 published US patent 7,935,954 Tavkhelidze A., Edelson J., Cox I., Harbron S http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=5&f=G&l=50&co1=AND&d=PTXT&s1=Tavkhelidze.INNM.&OS=IN/Tavkhelidze&RS=IN/Tavkhelidze