Selective light absorbing semiconductor surface

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8195 2 22116 document 8195 lightbox.jpg image/png 1ab69bc14bcc0fde5ce824117c4e3ecf MD5 41251 2015-04-02 07:57:43 http://eprints.iliauni.edu.ge/1428/7/lightbox.jpg 1428 7 7 image/png other Thumbnails conversion from text to thumbnail_lightbox ge public

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http://eprints.org/relation/isVersionOf http://eprints.iliauni.edu.ge/id/document/8194 http://eprints.org/relation/isVolatileVersionOf http://eprints.iliauni.edu.ge/id/document/8194 http://eprints.org/relation/issmallThumbnailVersionOf http://eprints.iliauni.edu.ge/id/document/8194 archive 15 disk0/00/00/14/28 2014-05-08 09:28:55 2015-04-02 07:57:19 2014-05-08 09:28:55 patent show Tavkhelidze A. avtandil.tavkhelidze@iliauni.edu.ge Selective light absorbing semiconductor surface pub T1 fac_eng restricted A selective light absorbing semiconductor surface is disclosed. Said semiconductor surface is characterized by the presence of indentations or protrusions comprising a grating of dimensions such as to enhance the absorption of selected frequencies of radiation. In a preferred embodiment of the present invention, said grating is formed on the surface of a doped semiconductor for the purposes of optical frequency down conversion. The semiconductor is doped so as to create energy levels within the forbidden zone between the conduction and valence bands. Incident radiation excites electrons from the valence to conduction band from where they decay to the meta-stable newly created energy level in the forbidden zone. From there, electrons return to the valence band, accompanied by the emission of radiation of lower frequency than that of the incident radiation. Optical frequency down-conversion is thus efficiently and rapidly accomplished. In a further embodiment of the present invention said grating is formed on the entrance and exit surfaces of one or more layers of a single or multi-junction solar cell. In this embodiment said grating is characterized by indents of depth .lamda./4 and width >.lamda., where .lamda. is the wavelength of solar radiation incident on the layer under consideration. 2012 published US patent 8,227,885 Tavkhelidze A., Bibilashvili A., Taliashvili Z. http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=4&f=G&l=50&co1=AND&d=PTXT&s1=Tavkhelidze.INNM.&OS=IN/Tavkhelidze&RS=IN/Tavkhelidze