Method for modification of built in potential of diodes

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http://eprints.org/relation/isVersionOf http://eprints.iliauni.edu.ge/id/document/8199 http://eprints.org/relation/isVolatileVersionOf http://eprints.iliauni.edu.ge/id/document/8199 http://eprints.org/relation/issmallThumbnailVersionOf http://eprints.iliauni.edu.ge/id/document/8199 archive 15 disk0/00/00/14/27 2014-05-08 09:29:01 2015-04-02 07:58:19 2014-05-08 09:29:01 patent show avtandil.tavkhelidze@iliauni.edu.ge Tavkhelidze A. avtandil.tavkhelidze@iliauni.edu.ge Method for modification of built in potential of diodes pub T1 fac_eng restricted In broad terms the present invention is a semiconductor junction comprising a first material (102) and a second material (104), in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed. 2012 published US patent 8,330,192 Tavkhelidze A., Bibilashvili A, Cox R. T. http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=3&f=G&l=50&co1=AND&d=PTXT&s1=Tavkhelidze.INNM.&OS=IN/Tavkhelidze&RS=IN/Tavkhelidze