1412 15 5680 1 15774 document 5680 Bonn_2013.pptx application/vnd.openxmlformats-officedocument.presentationml.presentation 7ab311efdd5bee666bcd776c8e7ebbc8 MD5 2134244 2014-05-04 07:31:47 http://eprints.iliauni.edu.ge/1412/1/Bonn_2013.pptx 1412 1 1 application/vnd.openxmlformats-officedocument.presentationml.presentation slideshow en public

Bonn_2013.pptx

archive 15 disk0/00/00/14/12 2014-05-05 12:52:16 2015-05-01 06:25:31 2014-05-05 12:52:16 conference_item show Tavkhelidze A. avtandil.tavkhelidze@iliauni.edu.ge unpub T1 fac_eng public speech Recently, new quantum features have been observed and studied in the area of nanostructured layers (NL). Nanograting on the surface of the thin layer impose additional boundary conditions on electron wave function and reduce the quantum state density. As a result, the chemical potential of NL increases and becomes nanograting size dependent. Here, we propose a system composed of NL and an additional layer on the top of the ridges forming periodic series of p–n junctions [1]. In such system, charge depletion region develops inside the nanograting and its effective depth reduces, becoming a rather strong function of temperature T. Consequently, T-dependence of chemical potential magnifies and Seebeck coefficient S increases. We investigate S in the system of semiconductor NL having abrupt p–n junctions on the top of the grating. Analysis made on the basis of Boltzmann transport equations shows dramatic increase in S. At the same time, other transport coefficients remain unaffected by the junctions. Calculations show one order of magnitude increase in the thermoelectric figure of merit ZT relative to bulk material. 2009 2013 Theransport at Nanoscale, 529th Wilhelm and Else Heraueus Seminar workshop FALSE