Method for modification of built in potential of diodes

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http://eprints.org/relation/isVersionOf http://eprints.iliauni.edu.ge/id/document/8208 http://eprints.org/relation/isVolatileVersionOf http://eprints.iliauni.edu.ge/id/document/8208 http://eprints.org/relation/issmallThumbnailVersionOf http://eprints.iliauni.edu.ge/id/document/8208 archive 15 disk0/00/00/14/11 2014-05-04 14:34:04 2015-04-02 08:01:23 2014-05-04 14:34:04 patent show avtotav@gmail.com Tavkhelidze A. avtandil.tavkhelidze@iliauni.edu.ge Bibilashvili A. Cox R. T. Method for modification of built in potential of diodes pub T1 fac_eng restricted In broad terms the present invention is a semiconductor junction comprising a first material (102) and a second material (104), in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed. 2012-12-11 published US 8,330,192 Tavkhelidze A., Bibilashvili A, Cox R. T.