Geometry-induced electron doping in periodic semiconductor nanostructures

1396 16 5606 1 15630 document 5606 PHYSE_11505_archive.pdf application/pdf 3eb638bb730ae53a1a12d594ebd91d7a MD5 949800 2014-05-02 13:54:52 http://eprints.iliauni.edu.ge/1396/1/PHYSE_11505_archive.pdf 1396 1 1 application/pdf text en public

PHYSE_11505_archive.pdf

5607 2 15634 document 5607 lightbox.jpg image/png b00aa1a4aeceb263ccf993a5ba0241c8 MD5 22363 2014-05-02 14:05:04 http://eprints.iliauni.edu.ge/1396/2/lightbox.jpg 1396 2 2 image/png other Thumbnails conversion from text to thumbnail_lightbox ge public

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http://eprints.org/relation/isVersionOf http://eprints.iliauni.edu.ge/id/document/5606 http://eprints.org/relation/isVolatileVersionOf http://eprints.iliauni.edu.ge/id/document/5606 http://eprints.org/relation/issmallThumbnailVersionOf http://eprints.iliauni.edu.ge/id/document/5606 archive 15 disk0/00/00/13/96 2014-05-04 14:34:33 2015-04-02 08:32:42 2014-05-04 14:34:33 article show Tavkhelidze A. avtandil.tavkhelidze@iliauni.edu.ge Geometry-induced electron doping in periodic semiconductor nanostructures pub T1 fac_eng public discussion_paper Recently, new quantum features have been observed and studied in the area of nanostructured layers. Nanograting on the surface of the thin layer imposes additional boundary conditions on the electron wave function and induces G-doping or geometry doping. G-doping is equivalent to donor doping from the point of view of the increase in electron concentration n. However, there are no ionized impurities. This preserves charge carrier scattering to the intrinsic semiconductor level and increases carrier mobility with respect to the donor-doped layer. G-doping involves electron confinement to the nanograting layer. Here, we investigate the system of multiple nanograting layers forming a series of hetero- or homojunctions. The system includes main and barrier layers. In the case of heterojunctions, both types of layers were G-doped. In the case of homojunctions, main layers were G-doped and barrier layers were donor-doped. In such systems, the dependence of n on layer geometry and material parameters was analysed. Si and GaAs homojunctions and GaAs/AlGaAs, Si/SiGe, GaInP/AlGAs, and InP/InAlAs heterojunctions were studied. G-doping levels of 1018–1019 cm−3 were obtained in homojunctions and type II heterojunctions. High G-doping levels were attained only when the difference between band gap values was low. 2014-06 published Physica E 60 Elsevier 4-10 TRUE http://dx.doi.org/10.1016/j.physe.2014.01.028